Semiconductor Device and Method of Forming Guard Ring Around Conductive TSV through Semiconductor Wafer

ABSTRACT

A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the first insulating layer is removed and a second portion of the first insulating layer remains as guard rings around the conductive vias. A conductive layer is formed over the conductive vias. A second insulating layer is formed over the surface of the semiconductor wafer, guard rings, and conductive vias. A portion of the second insulating layer is removed to expose the conductive vias and a portion of the guard rings.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a semiconductor device and method of forming guardrings around conductive TSV through a semiconductor wafer to providesufficient overlay margin.

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., light emitting diode (LED), small signaltransistor, resistor, capacitor, inductor, and power metal oxidesemiconductor field effect transistor (MOSFET). Integrated semiconductordevices typically contain hundreds to millions of electrical components.Examples of integrated semiconductor devices include microcontrollers,microprocessors, charged-coupled devices (CCDs), solar cells, anddigital micro-mirror devices (DMDs).

Semiconductor devices perform a wide range of functions such as signalprocessing, high-speed calculations, transmitting and receivingelectromagnetic signals, controlling electronic devices, transformingsunlight to electricity, and creating visual projections for televisiondisplays. Semiconductor devices are found in the fields ofentertainment, communications, power conversion, networks, computers,and consumer products. Semiconductor devices are also found in militaryapplications, aviation, automotive, industrial controllers, and officeequipment.

Semiconductor devices exploit the electrical properties of semiconductormaterials. The atomic structure of semiconductor material allows itselectrical conductivity to be manipulated by the application of anelectric field or base current or through the process of doping. Dopingintroduces impurities into the semiconductor material to manipulate andcontrol the conductivity of the semiconductor device.

A semiconductor device contains active and passive electricalstructures. Active structures, including bipolar and field effecttransistors, control the flow of electrical current. By varying levelsof doping and application of an electric field or base current, thetransistor either promotes or restricts the flow of electrical current.Passive structures, including resistors, capacitors, and inductors,create a relationship between voltage and current necessary to perform avariety of electrical functions. The passive and active structures areelectrically connected to form circuits, which enable the semiconductordevice to perform high-speed calculations and other useful functions.

Semiconductor devices are generally manufactured using two complexmanufacturing processes, i.e., front-end manufacturing, and back-endmanufacturing, each involving potentially hundreds of steps. Front-endmanufacturing involves the formation of a plurality of die on thesurface of a semiconductor wafer. Each semiconductor die is typicallyidentical and contains circuits formed by electrically connecting activeand passive components. Back-end manufacturing involves singulatingindividual semiconductor die from the finished wafer and packaging thedie to provide structural support and environmental isolation. The term“semiconductor die” as used herein refers to both the singular andplural form of the words, and accordingly can refer to both a singlesemiconductor device and multiple semiconductor devices.

One goal of semiconductor manufacturing is to produce smallersemiconductor devices. Smaller devices typically consume less power,have higher performance, and can be produced more efficiently. Inaddition, smaller semiconductor devices have a smaller footprint, whichis desirable for smaller end products. A smaller semiconductor die sizecan be achieved by improvements in the front-end process resulting insemiconductor die with smaller, higher density active and passivecomponents. Back-end processes may result in semiconductor devicepackages with a smaller footprint by improvements in electricalinterconnection and packaging materials.

A conventional semiconductor wafer may contain conductive throughsilicon vias (TSV). A plurality of vias is formed through thesemiconductor wafer. The vias are filled with conductive material toform the conductive TSV. A portion of the back surface of thesemiconductor wafer is removed by chemical mechanical polishing (CMP) toexpose a portion of the side surface of the conductive TSV. CMP is anexpensive manufacturing process. Alternatively, a portion of the backsurface of the semiconductor wafer is removed by a photolithographicetching process with a 1× stepper to expose a portion of the sidesurface of the conductive TSV. The 1× stepper typically cannot providesufficient overlay margin for the photolithographic and etching process.

SUMMARY OF THE INVENTION

A need exists for a cost effective process of extending a conductive TSVabove a surface of a semiconductor wafer while providing sufficientoverlay margin. Accordingly, in one embodiment, the present invention isa method of making a semiconductor device comprising the steps ofproviding a semiconductor wafer, forming a plurality of conductive viasinto the semiconductor wafer, removing a portion of the semiconductorwafer so the conductive vias extend above a surface of the semiconductorwafer, forming a first insulating layer over the surface of thesemiconductor wafer and conductive vias, removing a first portion of thefirst insulating layer while leaving a second portion of the firstinsulating layer as guard rings around the conductive vias, forming asecond insulating layer over the surface of the semiconductor wafer,guard rings, and conductive vias, and removing a portion of the secondinsulating layer to expose the conductive vias.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a semiconductordie, forming a conductive via through the semiconductor die with aportion of the conductive via extending above a surface of thesemiconductor wafer, forming a first insulating layer over the surfaceof the semiconductor wafer and conductive via, and removing a firstportion of the first insulating layer while leaving a second portion ofthe first insulating layer as a guard ring around the conductive via.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a semiconductordie, forming a conductive via through the semiconductor die with aportion of the conductive via extending above a surface of thesemiconductor wafer, and forming a guard ring over the surface of thesemiconductor wafer around the conductive via.

In another embodiment, the present invention is a semiconductor devicecomprising a semiconductor die and conductive via formed through thesemiconductor die with a portion of the conductive via extending above asurface of the semiconductor wafer. A guard ring is formed over thesurface of the semiconductor wafer around the conductive via.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a printed circuit board (PCB) with different types ofpackages mounted to its surface;

FIGS. 2 a-2 c illustrate further detail of the representativesemiconductor packages mounted to the PCB;

FIGS. 3 a-3 r illustrate a process of forming guard rings aroundconductive TSV through a semiconductor wafer;

FIG. 4 illustrates a semiconductor die with guard rings around theconductive TSV; and

FIG. 5 illustrates two stacked semiconductor die with guard rings aroundthe conductive TSV.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, it will be appreciated by those skilled in the art that itis intended to cover alternatives, modifications, and equivalents as maybe included within the spirit and scope of the invention as defined bythe appended claims and their equivalents as supported by the followingdisclosure and drawings.

Semiconductor devices are generally manufactured using two complexmanufacturing processes: front-end manufacturing and back-endmanufacturing. Front-end manufacturing involves the formation of aplurality of die on the surface of a semiconductor wafer. Each die onthe wafer contains active and passive electrical components, which areelectrically connected to form functional electrical circuits. Activeelectrical components, such as transistors and diodes, have the abilityto control the flow of electrical current. Passive electricalcomponents, such as capacitors, inductors, resistors, and transformers,create a relationship between voltage and current necessary to performelectrical circuit functions.

Passive and active components are formed over the surface of thesemiconductor wafer by a series of process steps including doping,deposition, photolithography, etching, and planarization. Dopingintroduces impurities into the semiconductor material by techniques suchas ion implantation or thermal diffusion. The doping process modifiesthe electrical conductivity of semiconductor material in active devices,transforming the semiconductor material into an insulator, conductor, ordynamically changing the semiconductor material conductivity in responseto an electric field or base current. Transistors contain regions ofvarying types and degrees of doping arranged as necessary to enable thetransistor to promote or restrict the flow of electrical current uponthe application of the electric field or base current.

Active and passive components are formed by layers of materials withdifferent electrical properties. The layers can be formed by a varietyof deposition techniques determined in part by the type of materialbeing deposited. For example, thin film deposition can involve chemicalvapor deposition (CVD), physical vapor deposition (PVD), electrolyticplating, and electroless plating processes. Each layer is generallypatterned to form portions of active components, passive components, orelectrical connections between components.

The layers can be patterned using photolithography, which involves thedeposition of light sensitive material, e.g., photoresist, over thelayer to be patterned. A pattern is transferred from a photomask to thephotoresist using light. In one embodiment, the portion of thephotoresist pattern subjected to light is removed using a solvent,exposing portions of the underlying layer to be patterned. In anotherembodiment, the portion of the photoresist pattern not subjected tolight, i.e., the negative photoresist, is removed using a solvent,exposing portions of the underlying layer to be patterned. The remainderof the photoresist is removed, leaving behind a patterned layer.Alternatively, some types of materials are patterned by directlydepositing the material into the areas or voids formed by a previousdeposition/etch process using techniques such as electroless andelectrolytic plating.

Patterning is the basic operation by which portions of the top layers onthe semiconductor wafer surface are removed. Portions of thesemiconductor wafer can be removed using photolithography, photomasking,masking, oxide or metal removal, photography and stenciling, andmicrolithography. Photolithography includes forming a pattern inreticles or a photomask and transferring the pattern into the surfacelayers of the semiconductor wafer. Photolithography forms the horizontaldimensions of active and passive components on the surface of thesemiconductor wafer in a two-step process. First, the pattern on thereticle or masks is transferred into a layer of photoresist. Photoresistis a light-sensitive material that undergoes changes in structure andproperties when exposed to light. The process of changing the structureand properties of the photoresist occurs as either negative-actingphotoresist or positive-acting photoresist. Second, the photoresistlayer is transferred into the wafer surface. The transfer occurs whenetching removes the portion of the top layers of semiconductor wafer notcovered by the photoresist. The chemistry of photoresists is such thatthe photoresist remains substantially intact and resists removal bychemical etching solutions while the portion of the top layers of thesemiconductor wafer not covered by the photoresist is removed. Theprocess of forming, exposing, and removing the photoresist, as well asthe process of removing a portion of the semiconductor wafer can bemodified according to the particular resist used and the desiredresults.

In negative-acting photoresists, photoresist is exposed to light and ischanged from a soluble condition to an insoluble condition in a processknown as polymerization. In polymerization, unpolymerized material isexposed to a light or energy source and polymers form a cross-linkedmaterial that is etch-resistant. In most negative resists, the polymersare polyisopremes. Removing the soluble portions (i.e. the portions notexposed to light) with chemical solvents or developers leaves a hole inthe resist layer that corresponds to the opaque pattern on the reticle.A mask whose pattern exists in the opaque regions is called aclear-field mask.

In positive-acting photoresists, photoresist is exposed to light and ischanged from relatively nonsoluble condition to much more solublecondition in a process known as photosolubilization. Inphotosolubilization, the relatively insoluble resist is exposed to theproper light energy and is converted to a more soluble state. Thephotosolubilized part of the resist can be removed by a solvent in thedevelopment process. The basic positive photoresist polymer is thephenol-formaldehyde polymer, also called the phenol-formaldehyde novolakresin. Removing the soluble portions (i.e. the portions exposed tolight) with chemical solvents or developers leaves a hole in the resistlayer that corresponds to the transparent pattern on the reticle. A maskwhose pattern exists in the transparent regions is called a dark-fieldmask.

After removal of the top portion of the semiconductor wafer not coveredby the photoresist, the remainder of the photoresist is removed, leavingbehind a patterned layer. Alternatively, some types of materials arepatterned by directly depositing the material into the areas or voidsformed by a previous deposition/etch process using techniques such aselectroless and electrolytic plating.

Depositing a thin film of material over an existing pattern canexaggerate the underlying pattern and create a non-uniformly flatsurface. A uniformly flat surface is required to produce smaller andmore densely packed active and passive components. Planarization can beused to remove material from the surface of the wafer and produce auniformly flat surface. Planarization involves polishing the surface ofthe wafer with a polishing pad. An abrasive material and corrosivechemical are added to the surface of the wafer during polishing. Thecombined mechanical action of the abrasive and corrosive action of thechemical removes any irregular topography, resulting in a uniformly flatsurface.

Back-end manufacturing refers to cutting or singulating the finishedwafer into the individual semiconductor die and then packaging thesemiconductor die for structural support and environmental isolation. Tosingulate the semiconductor die, the wafer is scored and broken alongnon-functional regions of the wafer called saw streets or scribes. Thewafer is singulated using a laser cutting tool or saw blade. Aftersingulation, the individual semiconductor die are mounted to a packagesubstrate that includes pins or contact pads for interconnection withother system components. Contact pads formed over the semiconductor dieare then connected to contact pads within the package. The electricalconnections can be made with solder bumps, stud bumps, conductive paste,or wirebonds. An encapsulant or other molding material is deposited overthe package to provide physical support and electrical isolation. Thefinished package is then inserted into an electrical system and thefunctionality of the semiconductor device is made available to the othersystem components.

FIG. 1 illustrates electronic device 50 having a chip carrier substrateor printed circuit board (PCB) 52 with a plurality of semiconductorpackages mounted on its surface. Electronic device 50 can have one typeof semiconductor package, or multiple types of semiconductor packages,depending on the application. The different types of semiconductorpackages are shown in FIG. 1 for purposes of illustration.

Electronic device 50 can be a stand-alone system that uses thesemiconductor packages to perform one or more electrical functions.Alternatively, electronic device 50 can be a subcomponent of a largersystem. For example, electronic device 50 can be part of a cellularphone, personal digital assistant (PDA), digital video camera (DVC), orother electronic communication device. Alternatively, electronic device50 can be a graphics card, network interface card, or other signalprocessing card that can be inserted into a computer. The semiconductorpackage can include microprocessors, memories, application specificintegrated circuits (ASIC), logic circuits, analog circuits, RFcircuits, discrete devices, or other semiconductor die or electricalcomponents. Miniaturization and weight reduction are essential for theseproducts to be accepted by the market. The distance betweensemiconductor devices must be decreased to achieve higher density.

In FIG. 1, PCB 52 provides a general substrate for structural supportand electrical interconnect of the semiconductor packages mounted on thePCB. Conductive signal traces 54 are formed over a surface or withinlayers of PCB 52 using evaporation, electrolytic plating, electrolessplating, screen printing, or other suitable metal deposition process.Signal traces 54 provide for electrical communication between each ofthe semiconductor packages, mounted components, and other externalsystem components. Traces 54 also provide power and ground connectionsto each of the semiconductor packages.

In some embodiments, a semiconductor device has two packaging levels.First level packaging is a technique for mechanically and electricallyattaching the semiconductor die to an intermediate carrier. Second levelpackaging involves mechanically and electrically attaching theintermediate carrier to the PCB. In other embodiments, a semiconductordevice may only have the first level packaging where the die ismechanically and electrically mounted directly to the PCB.

For the purpose of illustration, several types of first level packaging,including bond wire package 56 and flipchip 58, are shown on PCB 52.Additionally, several types of second level packaging, including ballgrid array (BGA) 60, bump chip carrier (BCC) 62, dual in-line package(DIP) 64, land grid array (LGA) 66, multi-chip module (MCM) 68, quadflat non-leaded package (QFN) 70, and quad flat package 72, are shownmounted on PCB 52. Depending upon the system requirements, anycombination of semiconductor packages, configured with any combinationof first and second level packaging styles, as well as other electroniccomponents, can be connected to PCB 52. In some embodiments, electronicdevice 50 includes a single attached semiconductor package, while otherembodiments call for multiple interconnected packages. By combining oneor more semiconductor packages over a single substrate, manufacturerscan incorporate pre-made components into electronic devices and systems.Because the semiconductor packages include sophisticated functionality,electronic devices can be manufactured using less expensive componentsand a streamlined manufacturing process. The resulting devices are lesslikely to fail and less expensive to manufacture resulting in a lowercost for consumers.

FIGS. 2 a-2 c show exemplary semiconductor packages. FIG. 2 aillustrates further detail of DIP 64 mounted on PCB 52. Semiconductordie 74 includes an active region containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and are electricallyinterconnected according to the electrical design of the die. Forexample, the circuit can include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements formedwithin the active region of semiconductor die 74. Contact pads 76 areone or more layers of conductive material, such as aluminum (Al), copper(Cu), tin (Sn), nickel (Ni), gold (Au), or silver (Ag), and areelectrically connected to the circuit elements formed withinsemiconductor die 74. During assembly of DIP 64, semiconductor die 74 ismounted to an intermediate carrier 78 using a gold-silicon eutecticlayer or adhesive material such as thermal epoxy or epoxy resin. Thepackage body includes an insulative packaging material such as polymeror ceramic. Conductor leads 80 and bond wires 82 provide electricalinterconnect between semiconductor die 74 and PCB 52. Encapsulant 84 isdeposited over the package for environmental protection by preventingmoisture and particles from entering the package and contaminatingsemiconductor die 74 or bond wires 82.

FIG. 2 b illustrates further detail of BCC 62 mounted on PCB 52.Semiconductor die 88 is mounted over carrier 90 using an underfill orepoxy-resin adhesive material 92. Bond wires 94 provide first levelpackaging interconnect between contact pads 96 and 98. Molding compoundor encapsulant 100 is deposited over semiconductor die 88 and bond wires94 to provide physical support and electrical isolation for the device.Contact pads 102 are formed over a surface of PCB 52 using a suitablemetal deposition process such as electrolytic plating or electrolessplating to prevent oxidation. Contact pads 102 are electricallyconnected to one or more conductive signal traces 54 in PCB 52. Bumps104 are formed between contact pads 98 of BCC 62 and contact pads 102 ofPCB 52.

In FIG. 2 c, semiconductor die 58 is mounted face down to intermediatecarrier 106 with a flipchip style first level packaging. Active region108 of semiconductor die 58 contains analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed according to the electrical design of the die.For example, the circuit can include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements withinactive region 108. Semiconductor die 58 is electrically and mechanicallyconnected to carrier 106 through bumps 110.

BGA 60 is electrically and mechanically connected to PCB 52 with a BGAstyle second level packaging using bumps 112. Semiconductor die 58 iselectrically connected to conductive signal traces 54 in PCB 52 throughbumps 110, signal lines 114, and bumps 112. A molding compound orencapsulant 116 is deposited over semiconductor die 58 and carrier 106to provide physical support and electrical isolation for the device. Theflipchip semiconductor device provides a short electrical conductionpath from the active devices on semiconductor die 58 to conductiontracks on PCB 52 in order to reduce signal propagation distance, lowercapacitance, and improve overall circuit performance. In anotherembodiment, the semiconductor die 58 can be mechanically andelectrically connected directly to PCB 52 using flipchip style firstlevel packaging without intermediate carrier 106.

FIGS. 3 a-3 r illustrate, in relation to FIGS. 1 and 2 a-2 c, a processof forming guard rings around conductive TSV through a semiconductorwafer to provide sufficient overlay margin. FIG. 3 a shows asemiconductor wafer 120 with a base substrate material 122, such assilicon, germanium, gallium arsenide, indium phosphide, or siliconcarbide, for structural support. A plurality of semiconductor die orcomponents 124 is formed on wafer 120 separated by a non-active,inter-die wafer area or saw street 126 as described above. Saw street126 provides cutting areas to singulate semiconductor wafer 120 intoindividual semiconductor die 124.

FIG. 3 b shows a cross-sectional view of a portion of semiconductorwafer 120. Each semiconductor die 124 has a back surface 128 and activesurface 130 containing analog or digital circuits implemented as activedevices, passive devices, conductive layers, and dielectric layersformed within the die and electrically interconnected according to theelectrical design and function of the die. For example, the circuit mayinclude one or more transistors, diodes, and other circuit elementsformed within active surface 130 to implement analog circuits or digitalcircuits, such as digital signal processor (DSP), ASIC, memory, or othersignal processing circuit. Semiconductor die 124 may also containintegrated passive devices (IPDs), such as inductors, capacitors, andresistors, for RF signal processing.

In FIG. 3 c, a plurality of blind vias 133 is formed into active surface130 and partially but not completely through semiconductor wafer 120using mechanical drilling, laser drilling, or deep reactive ion etching(DRIE).

In FIG. 3 d, an insulating or dielectric layer 134 is formed oversidewalls of vias 133 using PVD, CVD, printing, spin coating, spraycoating, sintering or thermal oxidation. The insulating layer 134contains one or more layers of silicon dioxide (SiO2), silicon nitride(Si3N4), silicon oxynitride (SiON), tantalum pentoxide (Ta2O5), aluminumoxide (Al2O3), hafnium oxide (HfO2), benzocyclobutene (BCB), polyimide(PI), polybenzoxazoles (PBO), or other suitable dielectric material.

An electrically conductive layer 136 is formed over insulating layer 134within vias 133 using a patterning and metal deposition process such asprinting, PVD, CVD, sputtering, electrolytic plating, and electrolessplating. Conductive layer 136 can be one or more layers of Ni, tantalumnitride (TaN), nickel vanadium (NiV), platinum (Pt), palladium (Pd),chromium copper (CrCu), or other suitable barrier material.

In FIG. 3 e, blind vias 133 are filled with Al, Cu, Sn, Ni, Au, Ag,titanium (Ti), tungsten (W), poly-silicon, or other suitableelectrically conductive material using electrolytic plating, electrolessplating process, or other suitable metal deposition process to formz-direction conductive TSV 138 lined with insulating layer 134 andconductive layer 136 and embedded within semiconductor wafer 120. In oneembodiment, conductive layer 136 operates as a barrier layer to inhibitdiffusion of conductive TSV 138, e.g. Cu, into insulating layer 134 andbase substrate material 122. Conductive TSV 138 are electricallyconnected to the circuits on active surface 130. A portion of activesurface 130 of semiconductor die 124 is optionally removed by grinder140 or CMP to planarize the surface and expose conductive TSV 138.

In FIG. 3 f, an electrically conductive bump material is deposited overconductive TSV 138 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The bumpmaterial can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinationsthereof, with an optional flux solution. For example, the bump materialcan be eutectic Sn/Pb, high-lead solder, or lead-free solder. The bumpmaterial is bonded to conductive TSV 138 using a suitable attachment orbonding process. In one embodiment, the bump material is reflowed byheating the material above its melting point to form spherical balls orbumps 142. In some applications, bumps 142 are reflowed a second time toimprove electrical contact to conductive TSV 138. An optional under bumpmetallization (UBM) layer can be disposed between bumps 142 andconductive TSV 138. Bumps 142 can also be compression bonded toconductive TSV 138. Bumps 142 represent one type of interconnectstructure that can be formed over conductive TSV 138. The interconnectstructure can also use stud bump, micro bump, or other electricalinterconnect.

FIG. 3 g shows a temporary substrate or carrier 144 containingsacrificial base material such as silicon, polymer, beryllium oxide,glass, or other suitable low-cost, rigid material for structuralsupport. An interface layer or double-sided tape 146 is formed overcarrier 144 as a temporary adhesive bonding film, etch-stop layer, orthermal release layer. Semiconductor wafer 120 is inverted, positionedover, and mounted to interface layer 146 over carrier 144 with activesurface 130 and bumps 142 oriented toward the carrier. FIG. 3 h showssemiconductor wafer 120 mounted to interface layer 146 over carrier 144.

Semiconductor wafer 120 and carrier 144 are placed in a chase mold. Amold underfill (MUF) material 148 in a liquid state is injected into thechase mold between semiconductor wafer 120 and carrier 144. MUF material148 can be an encapsulant, molding compound, or polymer compositematerial, such as epoxy resin with filler, epoxy acrylate with filler,or polymer with proper filler. MUF material 148 is cured. FIG. 3 i showsMUF material 148 disposed between semiconductor wafer 120 and carrier144.

In FIG. 3 j, a portion of back surface 128 is removed by a combinationof backgrinding, CMP, and/or etching processes to expose conductive TSV138 above surface 150 of semiconductor wafer 120. Conductive TSV 138remains lined with insulating layer 134 and conductive layer 136 andextending above surface 150 of semiconductor wafer 120.

An electrically conductive layer 151 is formed over insulating layer134, conductive layer 136, and conductive TSV 138 using a patterning andmetal deposition process such as printing, PVD, CVD, sputtering,electrolytic plating, and electroless plating. Conductive layer 151 canbe one or more layers of titanium tungsten (TiW), titanium copper(TiCu), titanium tungsten copper (TiWCu), tantalum nitrogen copper(TaNCu), or other suitable material. In one embodiment, conductive layer151 operates as a seed layer for electrical interconnect to externaldevices. Conductive layer 151 can be formed prior to etching surface 128to extend conductive TSV 138 above surface 150.

In FIG. 3 k, an insulating or dielectric layer 152 is conformallyapplied over surface 150 of semiconductor wafer 120, insulating layer134, and conductive layer 151 using PVD, CVD, printing, spin coating,spray coating, sintering or thermal oxidation. The insulating layer 152contains one or more layers of SiO2, Si3N4, SiON, Ta2O5, Al2O3, HfO2,PI, BCB, PBO, or other material having similar dielectric properties.The insulating layer 152 follows the contour of surface 150, insulatinglayer 134, and conductive layer 151.

In FIG. 3 l, a portion of insulating layer 152 is removed by an etchingprocess through a patterned photoresist layer to expose surface 150 ofsemiconductor wafer 120 and conductive TSV 138, while leaving a portionof insulating layer 152 around insulating layer 134, conductive layer136, and conductive TSV 138 as guard rings 154. In another embodiment, aportion of insulating layer 152 is removed by laser direct ablation(LDA) using laser 155 to form guard rings 154 around insulating layer134, conductive layer 136, and conductive TSV 138. FIG. 3 m shows a planview of insulating layer 152 as guard rings 154 around insulating layer134, conductive layer 136, and conductive TSV 138. Guard rings 154 areformed around conductive TSV 138 for overlay margin during subsequentmanufacturing process using photolithography.

In FIG. 3 n, an insulating or passivation layer 156 is conformallyapplied over surface 150 of semiconductor wafer 120, guard rings 154,and conductive layer 151 using PVD, CVD, printing, spin coating, spraycoating, sintering or thermal oxidation. The insulating layer 156contains one or more layers of SiO2, Si3N4, SiON, Ta2O5, Al2O3, or othermaterial having similar structural and insulating properties. Theinsulating layer 156 follows the contour of surface 150, guard rings154, and conductive layer 151.

In FIG. 3 o, a portion of insulating layer 156 is removed by an etchingprocess through a patterned photoresist layer to expose conductive layer151 and a portion of guard rings 154. In another embodiment, a portionof insulating layer 156 is removed by LDA using laser 162 to exposeconductive layer 151 and a portion of guard rings 154. FIG. 3 p showsfurther detail of insulating layer 156, conductive layer 151, and guardring 154 in block 164 defined in FIG. 3 o. FIG. 3 q shows an embodimentwith insulating layer 156 formed over surface 150 of semiconductor wafer120 and guard rings 154, while exposing conductive layer 151.

In FIG. 3 r, semiconductor wafer 120 is singulated through insulatinglayer 156, saw street 126, and MUF material 148 using a saw blade orlaser cutting tool 166 into individual semiconductor die 124. Carrier144 and interface layer 146 are removed by chemical etching, mechanicalpeeling, CMP, mechanical grinding, thermal bake, UV light, laserscanning, or wet stripping to expose bumps 142.

FIG. 4 shows semiconductor die 124 after singulation. The circuits onactive surface 130 of semiconductor die 124 are electrically connectedthrough conductive TSV 138 to bumps 142. Guard rings 154 are formedaround conductive TSV 138 for overlay margin during subsequentmanufacturing process using photolithography.

FIG. 5 shows two stacked semiconductor die 124 electrically connectedthrough conductive TSV 138. The circuits on active surface 130 ofsemiconductor die 124 a are electrically connected through conductiveTSV 138 and bumps 142 to the circuits on active surface 130 ofsemiconductor die 124 b.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

What is claimed:
 1. A method of making a semiconductor device,comprising: providing a semiconductor wafer; forming a plurality ofconductive vias into the semiconductor wafer; removing a portion of thesemiconductor wafer so the conductive vias extend above a surface of thesemiconductor wafer; forming a first insulating layer over the surfaceof the semiconductor wafer and conductive vias; removing a first portionof the first insulating layer while leaving a second portion of thefirst insulating layer as guard rings around the conductive vias;forming a second insulating layer over the surface of the semiconductorwafer, guard rings, and conductive vias; and removing a portion of thesecond insulating layer to expose the conductive vias.
 2. The method ofclaim 1, wherein forming the conductive vias includes: forming aplurality of vias through the semiconductor wafer; forming a thirdinsulating layer in the vias; and depositing a conductive material inthe vias.
 3. The method of claim 2, further including forming aconductive layer over the third insulating layer.
 4. The method of claim1, further including forming a conductive layer over the conductivevias.
 5. The method of claim 1, further including removing the portionof the second insulating layer to expose the guard rings.
 6. The methodof claim 1, further including removing the first portion of the firstinsulating layer by laser direct ablation.
 7. A method of making asemiconductor device, comprising: providing a semiconductor die; forminga conductive via through the semiconductor die with a portion of theconductive via extending above a surface of the semiconductor die;forming a first insulating layer over the surface of the semiconductordie and conductive via; and removing a first portion of the firstinsulating layer while leaving a second portion of the first insulatinglayer as a guard ring around the conductive via.
 8. The method of claim7, further including: forming a second insulating layer over the surfaceof the semiconductor die, guard ring, and conductive via; and removing aportion of the second insulating layer to expose the conductive via. 9.The method of claim 8, further including removing the portion of thesecond insulating layer to expose the guard ring.
 10. The method ofclaim 8, further including removing the portion of the second insulatinglayer over the conductive via by laser direct ablation.
 11. The methodof claim 7, wherein forming the conductive via includes: forming a viathrough the semiconductor die; forming a second insulating layer in thevia; and depositing a conductive material in the via.
 12. The method ofclaim 11, further including forming a conductive layer over the secondinsulating layer.
 13. The method of claim 7, further including forming aconductive layer over the conductive via.
 14. A method of making asemiconductor device, comprising: providing a semiconductor die; forminga conductive via through the semiconductor die with a portion of theconductive via extending above a surface of the semiconductor die; andforming a guard ring over the surface of the semiconductor die aroundthe conductive via.
 15. The method of claim 14, wherein forming theguard ring includes: forming an insulating layer over the surface of thesemiconductor die and conductive via; and removing a first portion ofthe insulating layer while leaving a second portion of the insulatinglayer as the guard ring around the conductive via.
 16. The method ofclaim 14, further including: forming an insulating layer over thesurface of the semiconductor die, guard ring, and conductive via; andremoving a portion of the insulating layer to expose the conductive via.17. The method of claim 16, further including removing the portion ofthe insulating layer to expose the guard ring.
 18. The method of claim14, wherein forming the conductive via includes: forming a via throughthe semiconductor die; forming an insulating layer in the via; anddepositing a conductive material in the via.
 19. The method of claim 18,further including forming a conductive layer over the insulating layer.20. The method of claim 14, further including forming a conductive layerover the conductive via.
 21. A semiconductor device, comprising: asemiconductor die; a conductive via formed through the semiconductor diewith a portion of the conductive via extending above a surface of thesemiconductor die; and a guard ring formed over the surface of thesemiconductor die around the conductive via.
 22. The semiconductordevice of claim 21, further including an insulating layer formed overthe surface of the semiconductor die and guard ring.
 23. Thesemiconductor device of claim 21, further including an insulating layerformed around the conductive via.
 24. The semiconductor device of claim21, further including a conductive layer formed around the insulatinglayer.
 25. The semiconductor device of claim 21, further including aconductive layer formed over the conductive via.